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  • MOSFET Test bench: Diode forward characteristics
    This article explains the test bench required to obtain the plot of diode forward characteristics from the MOSFET datasheet The plot is derived based on the datasheet conditions, and the same test bench can be used to obtain the plot at different test conditions based on customer requirements
  • Understanding power MOSFET data sheet parameters
    This application note explains the parameters and diagrams given in a Nexperia Semiconductors Power MOSFET data sheet The goal is to help an engineer decide what device is most suitable for a particular application
  • 3-26. Datasheets of MOSFET: Body Diode - Toshiba Electronic Devices . . .
    This page describes the electrical characteristics of the body diode shown in the datasheet
  • Understanding MOSFET datasheets plots: AC data
    This characteristic is shown by VSD (Body Diode Forward Voltage) and IS (Source Current) The VSD characteristic has a negative coefficient with respect to temperature, which means it remains consistent not only at room temperature but also at low and high temperatures
  • Littelfuse Discrete Power MOSFET Datasheet Explanation
    Power MOSFET generally contain a body diode, which provides freewheeling operation in the inductive load switching Hence, the MOSFET datasheet from Littelfuse also contains the electrical parameters and graphs related to the body diode
  • Datasheets of MOSFET: Body Diode | Toshiba Electronic Devices Storage . . .
    This page describes the electrical characteristics of the body diode shown in the datasheet
  • NTB5860NL - N-Channel Power MOSFET - onsemi
    *This information is generic Please refer to device data sheet for actual part marking Pb−Free indicator, “G” or microdot “ ”, may or may not be present Some products may not follow the Generic Marking
  • Datasheet BSC160N15NS5 - Infineon Technologies
    MOSFET OptiMOSTM 5 Power-Transistor, 150 V Features · N-channel, normal level · Excellent gate charge x RDS(on) product (FOM) · Very low on-resistance RDS(on) Very low reverse recovery charge (Qrr) · 150 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application
  • Power MOSFET Body Diode Continuous Current Carrying Capability
    The body diode forward voltage, VSD, specified in the data sheet is the drop from source-to-drain at the defined current and is typically on the order of 0 8 V to 1 0 V
  • LT3748 (Rev. D) - Analog
    As a result, the forward voltage drop of the secondary MOSFET body diode is reflected back to the primary side and sampled by the LT3748 In order to guarantee an accurate sample and to maintain excellent line and load regulation, the RDRAIN resistor of the LT8309 must be optimized to allow the body diode to conduct long enough to provide an





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